February 13, 1910 (Gengxu first month of the fourth day), the inventor of the transistor, William Shockley was born. William Shockley was born


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Shockley, United Kingdom - American physicist. February 13, 1910 Born in London, England. Shockley engaged in technical work at Bell Labs after the son of a mining engineer and graduated from the California Institute of Technology in 1932 and received his Ph.D. in 1936 at the Massachusetts Institute of Technology (lssjt.cn) Shockley and collaborators Bardeen and Brattain research accidental transistor effect. semiconductor research and discovery of the transistor effect, (l $ dj��.��r��) with Bardeen and Brattain shared the 1956 annual Nobel physics prize in 1955, Shockley served as the United States Department of Defense Weapon System Evaluation Group Research Director, in 1963, he was appointed professor of engineering science at Stanford University.